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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D883
BOTTOM VIEW
PESDxL2UM series Low capacitance double ESD protection diode
Product data sheet Supersedes data of 2003 Aug 05 2005 May 23
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
FEATURES * Uni-directional ESD protection of two lines or bi-directional ESD protection of one line * Reverse standoff voltage 3.3 and 5 V * Low diode capacitance * Ultra low leakage current * Leadless ultra small SOT883 surface mount package (1 x 0.6 x 0.5 mm) * Board space 1.17 mm2 (approx. 10% of SOT23) * ESD protection >15 kV * IEC 61000-4-2; level 4 (ESD); 15 kV (air) or 8 kV (contact). APPLICATIONS * Cellular handsets and accessories * Portable electronics * Computers and peripherals * Communication systems * Audio and video equipment. MARKING
Bottom view 2 Top view
PESDxL2UM series
DESCRIPTION Low capacitance ESD protection diode in a three pad SOT883 leadless ultra small plastic package designed to protect up to two transmission or data lines from ElectroStatic Discharge (ESD) damage. PINNING PIN 1 2 3 cathode 1 cathode 2 common anode DESCRIPTION
2
1
3 3
1
MLE220
TYPE NUMBER PESD3V3L2UM PESD5V0L2UM
MARKING CODE F2 F1 Fig.1 Simplified outline (SOT883) and symbol.
2005 May 23
2
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL Per diode Ipp peak pulse current PESD3V3L2UM PESD5V0L2UM Ppp IFSM IZSM peak pulse power non-repetitive peak forward current non-repetitive peak reverse current PESD3V3L2UM PESD5V0L2UM Ptot PZSM Tstg Tj ESD total power dissipation non-repetitive peak reverse power dissipation storage temperature junction temperature electrostatic discharge Tamb = 25 C; note 4 8/20 s pulse; notes 1, 2 and 3 tp = 1 ms; square pulse tp = 1 ms; square pulse 8/20 s pulse; notes 1, 2 and 3 PARAMETER CONDITIONS
PESDxL2UM series
MIN.
MAX.
UNIT
- - - - - - - - -65 - IEC 61000-4-2 (contact discharge) HBM MIL-Std 883 15 10 tp = 1 ms; square pulse; see Fig.4
3 2.5 30 3.5 0.9 0.8 250 6 +150 150 - -
A A W A A A mW W C C kV kV
Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. 4. Device mounted on standard printed-circuit board. ESD standards compliance IEC 61000-4-2, level 4 (ESD) HBM MIL-Std 883, class 3 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS all diodes loaded; note 1 one diode loaded; note 2 Notes 1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60 m copper strip line. 2. FR4 single-sided copper 1 cm2. VALUE 500 290 UNIT K/W K/W >15 kV (air); >8 kV (contact) >4 kV
2005 May 23
3
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL Per diode VF VRWM forward voltage reverse stand-off voltage PESD3V3L2UM PESD5V0L2UM IRM reverse leakage current PESD3V3L2UM PESD5V0L2UM V(CL)R clamping voltage PESD3V3L2UM VR = 3.3 V VR = 5 V 8/20 s pulse Ipp = 1 A; notes 1 and 2 Ipp = 3 A; notes 1 and 2 Ipp = 1 A; notes 1 and 3 Ipp = 3 A; notes 1 and 3 PESD5V0L2UM Ipp = 1 A; notes 1 and 2 Ipp = 2.5 A; notes 1 and 2 Ipp = 1 A; notes 1 and 3 Ipp = 2.5 A; notes 1 and 3 VBR breakdown voltage PESD3V3L2UM PESD5V0L2UM SZ temperature coefficient PESD3V3L2UM PESD5V0L2UM rdiff differential resistance PESD3V3L2UM PESD5V0L2UM Cd diode capacitance PESD3V3L2UM PESD5V0L2UM f = 1 MHz; VR = 0 f = 1 MHz; VR = 5 f = 1 MHz; VR = 0 f = 1 MHz; VR = 5 Notes 1. Non-repetitive current pulse 8/20 s exponential decay waveform; see Fig.5. 2. Pins 1 and 3 or 2 and 3. 3. Pins 1 and 2. - - - - IR = 1 mA - - IZ = 1 mA - - IZ = 1 mA 5.32 6.46 - - - - - - - - - - - - IF = 200 mA - PARAMETER CONDITIONS
PESDxL2UM series
MIN.
TYP.
MAX.
UNIT
1 - - 75 5 - - - - - - - - 5.6 6.8 1.3 2.9 - - 22 12 16 8
1.2 3.3 5 300 25 8 12 9 13 10 13 11 15 5.88 7.14 - - 200 100 28 17 19 11
V V V nA nA V V V V V V V V V V mV/K mV/K pF pF pF pF
2005 May 23
4
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, halfpage
10
MLE215
handbook, halfpage
26 Cd 22
MLE216
IZSM (A)
(pF)
18 PESD3V3L2UM 1 PESD3V3L2UM 14 PESD5V0L2UM PESD5V0L2UM
10
10-1 10-2
10-1
1
tp (ms)
10
6 0 1 2 3 4 VR (V) 5
Tj = 25 C; f = 1 MHz.
Fig.2
Non-repetitive peak reverse current as a function of pulse time (square pulse).
Fig.3
Diode capacitance as a function of reverse voltage; typical values.
102 handbook, halfpage PZSM (W)
MLE217
handbook, halfpage
120
MLE218
Ipp (%)
100 % Ipp; 8 s
80 PESD3V3L2UM 10 PESD5V0L2UM 40
e-t 50 % Ipp; 20 s
1 10-2
10-1
1
tp (ms)
10
0 0 10 20 30 t (s) 40
PZSM = VZSM x IZSM. VZSM is the non-repetitive peak reverse voltage at IZSM.
Fig.4
Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse).
Fig.5
8/20 s pulse waveform according to IEC 61000-4-5.
2005 May 23
5
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, full pagewidth
ESD TESTER RZ CZ note 1 1
450
RG 223/U 50 coax
10 x ATTENUATOR
4 GHz DIGITAL OSCILLOSCOPE
50
2 D.U.T PESDxL2UM 3
Note 1: IEC 61000-4-2 network CZ = 150 pF; RZ = 330
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 5 V/div horizontal scale = 50 ns/div
GND2
PESD5V0L2UM
PESD3V3L2UM GND GND1 unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network)
GND
GND
vertical scale = 200 V/div horizontal scale = 50 ns/div
vertical scale = 5 V/div horizontal scale = 50 ns/div
unclamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
clamped -1 kV ESD voltage waveform (IEC 61000-4-2 network)
MLE219
Fig.6 ESD clamping test set-up and waveforms.
2005 May 23
6
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
PESDxL2UM series
SOT883
L 2 b e
L1
3
b1
1
e1
A A1
E
D
0
0.5 scale
1 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A (1) 0.50 0.46 A1 max. 0.03 b 0.20 0.12 b1 0.55 0.47 D 0.62 0.55 E 1.02 0.95 e 0.35 e1 0.65 L 0.30 0.22 L1 0.30 0.22
Note 1. Including plating thickness OUTLINE VERSION SOT883 REFERENCES IEC JEDEC JEITA SC-101 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03
2005 May 23
7
NXP Semiconductors
Product data sheet
Low capacitance double ESD protection diode
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes PRODUCT STATUS(2) Development Qualification Production
PESDxL2UM series
DEFINITION This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS General Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2005 May 23 8 above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
NXP Semiconductors
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R76/02/pp9 Date of release: 2005 May 23 Document order number: 9397 750 15162

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